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IXFX21N100F Datasheet - IXYS Corporation

IXFX21N100F Power MOSFET

HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFX 21N100F IXFK 21N100F VDSS = 1000 V ID25 = 21 A RDS(on) = 0.50 Ω trr ≤ 250 ns PLUS 247TM (IXFX) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Tr.

IXFX21N100F Features

* l RF capable MOSFETs l Double metal process for low gate resistance l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Switched-mode and resonant-mode power supplies, >500kHz switching l DC

IXFX21N100F Datasheet (98.85 KB)

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Datasheet Details

Part number:

IXFX21N100F

Manufacturer:

IXYS Corporation

File Size:

98.85 KB

Description:

Power mosfet.

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IXFX21N100F Power MOSFET IXYS Corporation

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