IXFX24N120Q2 Datasheet - IXYS

IXFX24N120Q2 HiPerFET Power MOSFET

Advance Technical Data www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class IXFK 24N120Q2 IXFX 24N120Q2 VDSS = 1200 V = 24 A ID25 RDS(on) = 0.65 Ω trr ≤ 300 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-264 PLUS-247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ C.

IXFX24N120Q2 Features

* z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 5.0 ± 200 TJ = 25°C TJ = 125°C 50 2 0.65 V V nA µA mA Ω z z VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V z z D

IXFX24N120Q2_IXYS.pdf