Advance Technical Information GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK220N17T2 IXFX220N17T2 RDS(on) ≤ ≤ trr TO-264 (IXFK) VDSS ID25 = = 170V 220A 6.3mΩ 140ns Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limi
IXFK220N17T2_IXYSCorporation.pdf
Datasheet Details
Part number:
IXFX220N17T2, IXFK220N17T2
Manufacturer:
IXYS Corporation
File Size:
195.01 KB
Description:
Gigamos trencht2 hiperfet power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXFX220N17T2, IXFK220N17T2.
Please refer to the document for exact specifications by model.