* l l D = Drain TAB = Drain l 0.4/6 Nm/lb.in. 6 10 g g l RF capable MOSFETs Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier Applications Symbol Test Conditions Characteristic Val
IXFX24N100F Datasheet (120.24 KB)
IXFX24N100F
IXYS
120.24 KB
Hiperrf power mosfets.
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HiPerRFTM Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode Avalanche Rated, Lo.
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