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IXFX24N100F Datasheet - IXYS

IXFX24N100F - HiPerRF Power MOSFETs

Advance Technical Information www.DataSheet4U.com HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFX 24N100F VDSS = 1000 V IXFK 24N100F ID25 = 24 A RDS(on) = 0.39 Ω trr ≤ 250 ns PLUS 247TM (IXFX) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to

IXFX24N100F Features

* l l D = Drain TAB = Drain l 0.4/6 Nm/lb.in. 6 10 g g l RF capable MOSFETs Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier Applications Symbol Test Conditions Characteristic Val

IXFX24N100F_IXYS.pdf

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Datasheet Details

Part number:

IXFX24N100F

Manufacturer:

IXYS

File Size:

120.24 KB

Description:

Hiperrf power mosfets.

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IXFX24N100F HiPerRF Power MOSFETs IXYS