IXFX240N15T2 Datasheet - IXYS

IXFX240N15T2 GigaMOS TrenchT2 HiperFET Power MOSFET

Advance Technical Information www.DataSheet4U.com GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK240N15T2 IXFX240N15T2 VDSS = ID25 = RDS(on) ≤ trr ≤ 150V 240A 5.2mΩ 140ns TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC .

IXFX240N15T2 Features

* z International Standard Packages z High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density Applications z Synchronous Recification z DC-DC Converters z Battery Chargers z Switched-Mode and Resonant-Mode

IXFX240N15T2_IXYS.pdf