IXFX150N15, IXFK150N15 Datasheet - IXYS Corporation

IXFX150N15 Power MOSFET

HiPerFETTM Power MOSFETs Single MOSFET Die Preliminary data sheet IXFK 150N15 IXFX 150N15 VDSS = 150 V ID25 = 150 A = RDS(on) 12.5 mW trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) I DM IAR E AR EAS dv/dt P D TJ TJM T stg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C (MOSFET chip capability) External lead (current limit) T C = 25°C, Note 1 TC = 25°C T C = 25°C TC = 25°C I S £ I, DM di/dt £ 100 A/ms, V DD £ .

IXFX150N15 Features

* Internationalstandardpackages

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inductance - easy to drive and to protect

* Fast intrinsic rectifier Symbol V DSS V GS(th

IXFK150N15_IXYSCorporation.pdf

IXFX150N15 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXFX150N15, IXFK150N15. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXFX150N15, IXFK150N15

Manufacturer:

IXYS Corporation

File Size:

112.65 KB

Description:

Power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXFX150N15, IXFK150N15.
Please refer to the document for exact specifications by model.

IXFX150N15 Distributor

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TAGS

IXFX150N15 IXFK150N15 Power MOSFET IXYS Corporation