IXFX120N25P - PolarHT HiPerFET Power MOSFET
PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFK 120N25P IXFX 120N25P VDSS = ID25 = RDS(on) = trr < www.DataSheet4U.com 250 V 120 A 24 mΩ 200 ns Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, .
IXFX120N25P Features
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1.13/10 Nm/lb.in. 10 6 g g
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International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4