IXFX180N10, IXFK180N10 Datasheet - IXYS Corporation

IXFX180N10 Power MOSFETs

www.DataSheet4U.com HiPerFETTM Power MOSFETs Single MOSFET Die Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C (MOSFET chip capability) External lead (current limit) TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150.

IXFX180N10 Features

* International standard packages

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inductance - easy to drive and to protect

* Fast intrinsic rectifier Symbol Test Condi

IXFK180N10_IXYSCorporation.pdf

IXFX180N10 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXFX180N10, IXFK180N10. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXFX180N10, IXFK180N10

Manufacturer:

IXYS Corporation

File Size:

143.23 KB

Description:

Power mosfets.

Note:

This datasheet PDF includes multiple part numbers: IXFX180N10, IXFK180N10.
Please refer to the document for exact specifications by model.

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TAGS

IXFX180N10 IXFK180N10 Power MOSFETs IXYS Corporation

IXFX180N10 Distributor