IXFK180N10_IXYSCorporation.pdf
Datasheet Details
Part number:
IXFX180N10, IXFK180N10
Manufacturer:
IXYS Corporation
File Size:
143.23 KB
Description:
Power mosfets.
Note:
This datasheet PDF includes multiple part numbers: IXFX180N10, IXFK180N10.
Please refer to the document for exact specifications by model.
IXFX180N10, IXFK180N10, Power MOSFETs
www.DataSheet4U.com HiPerFETTM Power MOSFETs Single MOSFET Die Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C (MOSFET chip capability) External lead (current limit) TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150
IXFX180N10 Features
* International standard packages
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance - easy to drive and to protect
* Fast intrinsic rectifier Symbol Test Condi
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