Datasheet Details
Part number:
IXFX180N07, IXFK180N07
Manufacturer:
IXYS
File Size:
136.74 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXFX180N07, IXFK180N07.
Please refer to the document for exact specifications by model.
IXFX180N07, IXFK180N07, Power MOSFET
HiperFETTM Power MOSFETs IXFK180N07 IXFX180N07 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier D G S Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s
IXFX180N07 Features
* z International Standard Packages z Avalanche Rated z Low Intrinsic Gate Resistance z Low Package Inductance z Fast Intrinsic Rectifier z Low RDS(on) and QG Advantages z High Power Density z Easy to Mount z Space Savings Applications z DC-DC Converters z Battery Chargers z Switch-Mode and Resonant-M
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