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IXFX120N25, IXFK120N25 - HiPerFET Power MOSFETs

IXFX120N25 Description

Advance Technical Information www.DataSheet4U.com HiPerFETTM Power MOSFETs Single MOSFET Die IXFX 120N25 IXFK 120N25 VDSS ID25 RDS(on) = 250 V = 1.

IXFX120N25 Features

* l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Symbol Test Conditions Characteristic Values (TJ = 25°C, unless

IXFX120N25 Applications

* l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control l Temperature and lighting controls Advantages PLUS 247TM package for clip or spring mounting l Space savings l High power density l © 2002 IXYS All rights reserved 98912 (2/02)

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This datasheet PDF includes multiple part numbers: IXFX120N25, IXFK120N25. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXFX120N25, IXFK120N25
Manufacturer
IXYS
File Size
119.32 KB
Datasheet
IXFK120N25_IXYS.pdf
Description
HiPerFET Power MOSFETs
Note
This datasheet PDF includes multiple part numbers: IXFX120N25, IXFK120N25.
Please refer to the document for exact specifications by model.

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HiPerFET Power MOSFETs IXYS
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