* l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Symbol Test Conditions Characteristic Values (TJ = 25°C, unless
IXFX100N25 Datasheet (97.85 KB)
IXFX100N25
IXYS Corporation
97.85 KB
Power mosfet.
HiPerFETTM Power MOSFETs Single MOSFET Die IXFX 100N25 IXFK 100N25 VDSS ID25 RDS(on) = 250 V = 100 A = 27 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VG.
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