Datasheet Specifications
- Part number
- IXFX100N25
- Manufacturer
- IXYS Corporation
- File Size
- 97.85 KB
- Datasheet
- IXFX100N25_IXYSCorporation.pdf
- Description
- Power MOSFET
Description
HiPerFETTM Power MOSFETs Single MOSFET Die IXFX 100N25 IXFK 100N25 VDSS ID25 RDS(on) = 250 V = 100 A = 27 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VG.
Features
* l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Symbol Test Conditions Characteristic Values (TJ = 25°C, unlessApplications
* l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control l Temperature and lighting controls Advantages PLUS 247TM package for clip or spring mounting l Space savings l High power density l © 2001 IXYS All rights reserved 98613B (5/01IXFX100N25 Distributors
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