* z International Standard Packages z High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density Applications z Synchronous Recification z DC-DC Converters z Battery Chargers z Switch-Mode and Resonant-Mode Po
IXFX360N10T Datasheet (183.77 KB)
IXFX360N10T
IXYS
183.77 KB
Power mosfet.
Preliminary Technical Information GigaMOSTM Trench HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK360N1.
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Stock and price
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Microchip Technology Inc
|
| 1N6169US |
| 0 In Stock |
| Qty : 500 units |
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Unit Price : $11.26
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