Preliminary Technical Information GigaMOSTM Trench HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK360N10T IXFX360N10T VDSS = ID25 = RDS(on) ≤ trr ≤ 100V 360A 2.9mΩ 130ns TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width L
Datasheet Details
Part number:
IXFX360N10T, IXFK360N10T
Manufacturer:
IXYS
File Size:
183.77 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXFX360N10T, IXFK360N10T.
Please refer to the document for exact specifications by model.