IXFX30N50Q, IXFK30N50Q Datasheet - IXYS Corporation

IXFX30N50Q Power MOSFET

HiPerFETTM Power MOSFETs Q-Class IXFK/IXFX 30N50Q IXFK/IXFX 32N50Q N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS ID25 500 V 30 A 500 V 32 A RDS(on) 0.16 Ω 0.15 Ω trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient 500 V 500 V ±20 V ±30 V TC = 25°C TC = 25°C, pulse width limite.

IXFX30N50Q Features

* z IXYS advanced low Qg process z Low gate charge and capacitances - easier to drive - faster switching z International standard packages z Low RDS (on) z Unclamped Inductive Switching (UIS) rated z Molding epoxies meet UL 94 V-0 flammability classification Advantages z PLUS 247TM package for clip or

IXFK30N50Q_IXYSCorporation.pdf