* International Standard Packages
* Avalanche Rated
* Low Intrinsic Gate Resistance
* Low Package Inductance
* Fast Intrinsic Rectifier
* Molding epoxies meet UL 94 V-0 flammability classification
* Low RDS (on) HDMOSTM process Advantages
* High Power Density
* Ea
IXFX35N50 Datasheet (196.94 KB)
IXFX35N50
IXYS
196.94 KB
Power mosfets.
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr IXFK33N50 IXFX35N50 VDSS 500V ID25 33A 35A RDS(on) 160mī 1.
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