Description
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr IXFK33N50 IXFX35N50 VDSS 500V ID25 33A 35A RDS(on) 160m 1.
Features
* International Standard Packages
* Avalanche Rated
* Low Intrinsic Gate Resistance
* Low Package Inductance
* Fast Intrinsic Rectifier
* Molding epoxies meet UL 94 V-0
flammability classification
* Low RDS (on) HDMOSTM process
Advantages
* High Power Density
* Ea
Applications
* DC-DC Converters
* Battery Chargers
* Synchronous rectification
* Switch-Mode and Resonant-Mode
Power Supplies
* DC Choppers
* Temperature and Lighting Controls
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DS97517E(9/13)
Symbol
Test Conditions
(TJ = 25C, Unless Otherw