IXTC200N10T Datasheet - INCHANGE

IXTC200N10T, N-Channel MOSFET

isc N-Channel MOSFET Transistor *.

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Datasheet Details

Part number:

IXTC200N10T

Manufacturer:

INCHANGE

File Size:

246.96 KB

Description:

N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on) ≤ 6.3mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 101 IDM Drain Current-Single Pulsed 500 PD Total Dissipation @TC=25℃ 160 Tj Operating Junction Temperature -55~175 Tstg Storage T

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IXTC200N10T N-Channel MOSFET INCHANGE

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