IXTC200N10T Datasheet, Mosfet, INCHANGE

✔ IXTC200N10T Features

Static drain-source on-resistance: RDS(on) ≤ 6.3mΩ@VGS=10V
100% avalanche tested
Minimum Lot-to-Lot variations for robust device performance and reliable operation
A

✔ IXTC200N10T Application

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Sou

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IXTC200N10T

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📄 Datasheet

Description:

N-channel mosfet.

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IXYS Corporation

MOSFET N-CH 100V 101A ISOPLUS220

DigiKey

IXTC200N10T

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Qty : 50 units

Unit Price : $3.99

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IXTC200N10T N-Channel MOSFET INCHANGE