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IXTC200N10T - N-Channel MOSFET

INCHANGE

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Datasheet Details

Part number	IXTC200N10T
Manufacturer	INCHANGE
File Size	246.96 KB
Description	N-Channel MOSFET
Datasheet	IXTC200N10T-INCHANGE.pdf

IXTC200N10T Product details

Features

Static drain-source on-resistance: RDS(on) ≤ 6.3mΩ@VGS=10V.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Nov 11, 2020 |