IXTC75N10 Datasheet - IXYS Corporation

IXTC75N10 N-Channel MOSFET

www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION MegaMOSTMFET N-Channel Enhancement Mode IXTC 75N10 VDSS = 100 V = 72 A ID25 RDS(on) = 20 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C Maximum Ratings 100 100 ± 20 ± 30 72 300 230 -55 +150 150 -55 +150 V V V V A A W °C °C °C G = Gate, S = Source Patent pending D = Drain, G.

IXTC75N10 Features

* l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Applications Symbol Test

IXTC75N10 Datasheet (98.92 KB)