IXTC240N055T Datasheet - IXYS Corporation

IXTC240N055T - Power MOSFET

Preliminary Technical Information TrenchMVTM IXTC240N055T Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 132 4.0 V A mΩ Symbol VDSS VDGR VGSM ID25 IIDLM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient 55 55 ± 20 V V V TC = 25°C Package Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C

IXTC240N055T Features

* Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250

IXTC240N055T-IXYSCorporation.pdf

IXTC240N055T Datasheet Preview — Preview of IXTC240N055T PDF

Datasheet Details

Part number:

IXTC240N055T

Manufacturer:

IXYS Corporation

File Size:

181.48 KB

Description:

Power mosfet.

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IXTC240N055T Power MOSFET IXYS Corporation