* Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250
IXTC240N055T Datasheet (181.48 KB)
IXTC240N055T
IXYS Corporation
181.48 KB
Power mosfet.
Preliminary Technical Information TrenchMVTM IXTC240N055T Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche .
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