IXTC26N50P Datasheet, Mosfet, IXYS Corporation

IXTC26N50P Features

• Mosfet z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) Applications z DC-

PDF File Details

Part number:

IXTC26N50P

Manufacturer:

IXYS Corporation

File Size:

571.67kb

Download:

📄 Datasheet

Description:

Polarhv power mosfet.

IXTC26N50P Application

• Applications z DC-DC converters z z z z ISOPLUS220TM (IXTC) E153432 G D S Isolated Tab G = Gate S = Source D = Drain 1.6 mm (0.062 in.) from

TAGS

IXTC26N50P

IXYS Corporation

📁 Related Datasheet

IXTC26N50P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTC26N50P ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 260mΩ@V.

IXTC200N075T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTC200N075T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.0mΩ@VGS=10V ·Fully characterized avalanche vo.

IXTC200N085T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.0mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot vari.

IXTC200N085T - Power MOSFET (IXYS Corporation)
Preliminary Technical Information TrenchMVTM IXTC200N085T Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche .

IXTC200N10T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.3mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot vari.

IXTC200N10T - Power MOSFET (IXYS Corporation)
TrenchMVTM Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated IXTC200N10T Symbol VDSS VDGR VGSM ID25 ILRMS.

IXTC220N055T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTC220N055T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 4.0mΩ@VGS=10V ·Fully characterized avalanche vo.

IXTC220N075T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 4.5mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.

IXTC220N075T - Power MOSFET (IXYS Corporation)
Preliminary Technical Information TrenchMVTM IXTC220N075T Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche .

IXTC240N055T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTC240N055T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 3.6mΩ@VGS=10V ·Fully characterized avalanche vo.