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IXTC26N50P Datasheet - IXYS Corporation

IXTC26N50P PolarHV Power MOSFET

Advanced Technical Information PolarHVTM Power MOSFET Electrically Isolated Tab, N-Channel Enhancement Mode, Avalanche Rated IXTC 26N50P VDSS = 500 V = 13 A ID25 RDS(on) = 260 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC .

IXTC26N50P Features

* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(

IXTC26N50P_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXTC26N50P

Manufacturer:

IXYS Corporation

File Size:

571.67 KB

Description:

Polarhv power mosfet.

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IXTC26N50P IXTC26N50P PolarHV Power MOSFET IXYS Corporation

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