IXTC62N15P Datasheet - IXYS

IXTC62N15P Power MOSFET

Preliminary Technical Information PolarHTTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated IXTC 62N15P IXTR 62N15P VDSS = ID25 = RDS(on) ≤ 150 36 45 V A mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150°.

IXTC62N15P Features

* l International standard isolated packages l UL recognized packages l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l F

IXTC62N15P-IXYS.pdf