Datasheet Specifications
- Part number
- IXTC96N25T
- Manufacturer
- IXYS
- File Size
- 153.02 KB
- Datasheet
- IXTC96N25T-IXYS.pdf
- Description
- Power MOSFET
Description
Preliminary Technical Information Trench Gate IXTC96N25T Power MOSFET (Electrically Isolated Back Surface) VDSS = ID25 = RDS(on) ≤ 250V 40A 31mΩ.
Features
* z Silicon chip on Direct-Copper-Bond substrate z Isolated mounting surface z 2500V electrical isolation z Low drain to tab capacitance (< 30pF) Advantages z Easy assembly z Space savings z High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μApplications
* z DC-DC converters z Battery chargers z Switched-mode and resonant-mode power supplies z DC choppers z AC motor control z Uninterruptible power supplies z High speed power switching applications © 2007 IXYS CORPORATION, All rights reserved DS99915(10/07) Symbol Test Conditions (TJ = 25°C unlessIXTC96N25T Distributors
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