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IXTC96N25T - Power MOSFET

IXYS

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Datasheet Details

Part number	IXTC96N25T
Manufacturer	IXYS
File Size	153.02 KB
Description	Power MOSFET
Datasheet	IXTC96N25T-IXYS.pdf

IXTC96N25T Product details

Features

z Silicon chip on Direct-Copper-Bond substrate z Isolated mounting surface z 2500V electrical isolation z Low drain to tab capacitance (< 30pF) Advantages z Easy assembly z Space savings z High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 1mA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 48A, Note 1 Characteristic Values Min. Typ. Max. 250 V 3 5V ± 200 n.

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Published: Nov 10, 2020 |