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IXTH420N04T2 N-Channel MOSFET

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Description

isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number
IXTH420N04T2
Manufacturer
INCHANGE
File Size
334.85 KB
Datasheet
IXTH420N04T2-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on) ≤ 2mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 420 A IDM Drain Current-Single Pulsed 1050 A PD Total Dissipation @TC=25℃ 935 W Tj Operating Junction Temperature -55

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