IXTH102N15T Datasheet - INCHANGE

IXTH102N15T, N-Channel MOSFET

isc N-Channel MOSFET Transistor *

Features

* Static drain-source on-resistance: RDS(on) ≤ 18mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 150 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 102 A IDM Drain Current-Single Pulsed 300 A PD Total Dissipation @TC=25℃ 455 W Tj Operating Junction Temperature -55

IXTH102N15T-INCHANGE.pdf