* z International standard package JEDEC TO-247 AD z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z High commutating dv/dt rating z Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS(th) IGSS IDS
IXTH48N20 Datasheet (95.79 KB)
IXTH48N20
IXYS
95.79 KB
Power mosfet.
Advance Technical Information Standard Power MOSFET N-Channel Enhancement Mode IXTH 48N20 VDSS = 200 V ID (cont) = 48 A RDS(on) = 50 mΩ Symbol Tes.
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