IXTH48P20P Datasheet, Mosfet, IXYS Corporation

IXTH48P20P Features

• Mosfet z z z z 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque (TO-247, TO-3P) Mounting force (PLUS220) TO-247 TO-268 300 260 1.13 / 10 11..65 / 2.5..14.6 6 5 Inte

PDF File Details

Part number:

IXTH48P20P

Manufacturer:

IXYS Corporation

File Size:

127.42kb

Download:

📄 Datasheet

Description:

Polar3 power mosfet.

IXTH48P20P Application

• Applications z z z z z High side switching Push-pull amplifiers DC Choppers Current regulators Automatic test equipment Symbol Test Conditions (T

TAGS

IXTH48P20P

IXYS Corporation

📁 Related Datasheet

IXTH48N20 - Power MOSFET (IXYS)
Advance Technical Information Standard Power MOSFET N-Channel Enhancement Mode IXTH 48N20 VDSS = 200 V ID (cont) = 48 A RDS(on) = 50 mΩ Symbol Tes.

IXTH48N20 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 50mΩ(Max) ·Fast Swi.

IXTH48N65X2 - Power MOSFET (IXYS)
X2-Class Power MOSFET Preliminary Technical Information IXTH48N65X2 VDSS = ID25 = RDS(on) 650V 48A 65m N-Channel Enhancement Mode Avalanche Rat.

IXTH40N30 - Power MOSFET (IXYS Corporation)
.. MegaMOSTMFET IXTH 35N30 IXTH 40N30 IXTM 40N30 N-Channel Enhancement Mode VDSS 300 V 300 V 300 V ID25 35 A 40 A 40 A RDS(on) 0..

IXTH40N30 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 85mΩ(Max) ·Fast Swi.

IXTH40N50L2 - Power MOSFET (IXYS)
LinearL2TM Power MOSFET w/Extended FBSOA IXTT40N50L2 IXTQ40N50L2 IXTH40N50L2 VDSS = 500V ID25 = 40A  RDS(on) 170m N-Channel Enhancement Mode Aval.

IXTH40N50L2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·High speed switching ·Very high mutation ruggedness ·Easy to use ·100% avalanche .

IXTH420N04T2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2mΩ@VGS=10V ·Fully characterized avalanche voltage and curren.

IXTH420N04T2 - Power MOSFET (IXYS)
Advance Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTH420N04T2 VDSS = ID25 = RD.

IXTH440N055T2 - Power MOSFET (IXYS)
Advance Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTH440N055T2 IXTT440N055T2 V.