INCHANGE manufacturer logo Part number: IXTY1R4N100P Manufacturer: INCHANGE File Size: 261.93 KB Download: 📄 Datasheet Description: N-channel mosfet.
IXTY1R4N100P Datasheet PDF IXTY1R4N100P, IXYS PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P VDSS ID25 RDS(on) = 1000V = 1.4A ≤ 11.8Ω .
IXTY1R4N120P Datasheet PDF IXTY1R4N120P, IXYS PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY1R4N120PHV IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P Symbol VDSS VDGR VGSS VGSM ID2.
IXTY1R4N120PHV Datasheet PDF IXTY1R4N120PHV, IXYS PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY1R4N120PHV IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P Symbol VDSS VDGR VGSS VGSM ID2.
IXTY1R4N60P Datasheet PDF IXTY1R4N60P, IXYS PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU1R4N60P IXTY1R4N60P IXTP1R4N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt.
IXTY1R4N60P Datasheet PDF IXTY1R4N60P, INCHANGE isc N-Channel MOSFET Transistor IXTY1R4N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.0Ω@VGS=10V ·Fully characterized avalanche volt.
IXTY1R6N100D2 Datasheet PDF IXTY1R6N100D2, IXYS Corporation Depletion Mode MOSFET N-Channel IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 D VDSX = ID(on) > RDS(on) 1000V 1.6A 10 TO-252 (IXTY) G S Symbol VD.
IXTY1R6N50D2 Datasheet PDF IXTY1R6N50D2, IXYS Corporation Depletion Mode MOSFET N-Channel IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 D G S Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditio.
IXTY1R6N50P Datasheet PDF IXTY1R6N50P, IXYS PolarTM Power MOSFET IXTY1R6N50P IXTP1R6N50P VDSS = 500V ID25 = 1.6A RDS(on) 6.5 N-Channel Enhancement Mode Avalanche Rated TO-252 Fast Intri.
