IXTY1R4N100P Datasheet - INCHANGE

IXTY1R4N100P, N-Channel MOSFET

isc N-Channel MOSFET Transistor IXTY1R4N100P *

Features

* Static drain-source on-resistance: RDS(on) ≤ 11.8Ω@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

IXTY1R4N100P-INCHANGE.pdf