IXTY1R6N50P - Power MOSFET
PolarTM Power MOSFET IXTY1R6N50P IXTP1R6N50P VDSS = 500V ID25 = 1.6A RDS(on) 6.5 N-Channel Enhancement Mode Avalanche Rated TO-252 Fast Intrinsic Rectifier Symbol E VDSS VDGR T VGSS VGSM ID25 IDM E IA EAS dv/dt L PD TJ TJM O Tstg TL TSOLD S FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 V 500 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°
IXTY1R6N50P Features
* International Standard Packages
* Low QG
* Avalanche Rated
* Low Package Inductance
* Fast Intrinsic Rectifier Advantages
* High Power Density
* Easy to Mount
* Space Savings Applications
* DC-DC Converters
* Switch-Mode and Resonant-Mode Power Supplies
