IXTY01N80 Datasheet, Mosfet, IXYS Corporation

IXTY01N80 Features

• Mosfet Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2 4.5 ±50 TJ = 25°C TJ = 125°C 10 200 50 V V V nA µA µA Ω l VDSS VGS(th) IGSS ID

PDF File Details

Part number:

IXTY01N80

Manufacturer:

IXYS Corporation

File Size:

95.99kb

Download:

📄 Datasheet

Description:

Power mosfet.

IXTY01N80 Application

• Applications l l l l Level shifting Triggers Solid state relays Current regulators V GS = 10 V, ID = ID25 Pulse test, t ≤ 300 ms, duty cycle d ≤ 2

TAGS

IXTY01N80

IXYS Corporation

📁 Related Datasheet

IXTY01N100 - Power MOSFET (IXYS Corporation)
High Voltage Power MOSFET IXTU01N100 IXTY01N100 VDSS = ID25 =  RDS(on) 1000V 100mA 80 N-Channel Enhancement Mode TO-251 (IXTU) Symbol VDSS VDG.

IXTY01N100D - N-Channel MOSFET (IXYS Corporation)
Depletion Mode MOSFET N-Channel IXTY01N100D IXTU01N100D IXTP01N100D D G S Symbol VDSX VDGX VGSX VGSM IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Co.

IXTY02N120P - Power MOSFET (IXYS)
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY02N120P IXTP02N120P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM T.

IXTY02N50D - Power MOSFET (IXYS Corporation)
High Voltage Power MOSFET N-Channel IXTY02N50D IXTU02N50D IXTP02N50D D VDSX = ID25 =  RDS(on) 500V 200mA 30 TO-252 (IXTY) G S Symbol VDSX V.

IXTY05N100 - Power MOSFET (IXYS)
High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU05N100 IXTY05N100 VDSS = ID25 =  RDS(on) 1000V 750mA 17 TO-251 (IXTU) .

IXTY05N100 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTY05N100 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 17Ω@VGS=10V ·Fully characterized avalanche voltag.

IXTY08N100D2 - Power MOSFET (IXYS)
Depletion Mode MOSFET N-Channel IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 D VDSX = ID(on) >  RDS(on) 1000V 800mA 21 TO-252 (IXTY) G S G S D (Tab).

IXTY08N100P - Power MOSFET (IXYS)
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY08N100P IXTA08N100P IXTP08N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt.

IXTY08N100P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTY08N100P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 20Ω@VGS=10V ·Fully characterized avalanche volta.

IXTY08N50D2 - N-Channel MOSFET (IXYS Corporation)
Depletion Mode MOSFET N-Channel IXTY08N50D2 IXTA08N50D2 IXTP08N50D2 D VDSX = ID(on) >  RDS(on) 500V 800mA 4.6 TO-252 (IXTY) G S Symbol VDSX VG.