IXTY01N80 Datasheet - IXYS Corporation

IXTY01N80 Power MOSFET

www.DataSheet4U.com High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N80 IXTY 01N80 VDSS ID25 RDS(on) = 800 V = 100mA = 50 Ω Preliminary data sheet Symbol Test Conditions Maximum Ratings 01N100 800 800 ±20 ±30 100 400 25 -55 +150 150 -55 +150 V V TO-251 AA VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM Tstg TL Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C; TJ = 25°C to 150°C TC = 25°C, pulse width limited by max. TJ TC = 25°C G V V mA mA W °C.

IXTY01N80 Features

* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2 4.5 ±50 TJ = 25°C TJ = 125°C 10 200 50 V V V nA µA µA Ω l VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = 25 µA V DS = VGS, ID = 25 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V Internat

IXTY01N80_IXYSCorporation.pdf