IXTY01N80 Power MOSFET

IXYS Corporation

Description

www.DataSheet4U.com High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N80 IXTY 01N80 VDSS ID25 RDS(on) = 800 V = 100mA = 50 Ω Preliminary da.

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Datasheet Specifications

Part number: IXTY01N80
Manufacturer: IXYS Corporation
File Size: 95.99 KB
Datasheet: IXTY01N80_IXYSCorporation.pdf
Description: Power MOSFET

Features

* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2 4.5 ±50 TJ = 25°C TJ = 125°C 10 200 50 V V V nA µA µA Ω l VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = 25 µA V DS = VGS, ID = 25 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V Internat

Applications

* l l l l Level shifting Triggers Solid state relays Current regulators V GS = 10 V, ID = ID25 Pulse test, t ≤ 300 ms, duty cycle d ≤ 2 % © 2001 IXYS All rights reserved 98841 (5/01) IXTU 01N80 IXTY 01N80 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. ty

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IXTY01N80 Power MOSFET IXYS Corporation

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