Description
High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU05N100 IXTY05N100 VDSS = ID25 = RDS(on) 1000V 750mA 17 TO-251 (IXTU) .
Features
* International Standard Packages
* Fast Switching Times
* Avalanche Rated
* Rds(on) HDMOSTM Process
* Rugged Polysilicon Gate Cell structure
* Extended FBSOA
Advantages
* High Power Density
Applications
* Switch-Mode and Resonant-Mode Power Supplies
* Flyback Inverters
* DC Choppers
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DS100102B(9/17)
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 20V, ID = 500mA, Note 1
Ciss Coss Crss
VGS = 0V, VDS = 25V, f =