IXTY02N50D Datasheet - IXYS Corporation

IXTY02N50D Power MOSFET

High Voltage Power MOSFET N-Channel IXTY02N50D IXTU02N50D IXTP02N50D D VDSX = ID25 =  RDS(on) 500V 200mA 30 TO-252 (IXTY) G S Symbol VDSX VDGX VGSX VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJ TC = 25C TA = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-251 TO-220 Maximum Ratings 500 V 500.

IXTY02N50D Features

* Normally ON Mode

*  International Standard Packages

*  Low RDS(on) HDMOSTM Process

* Rugged Polysilicon Gate Cell Structure

* Fast Switching Speed Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

IXTY02N50D Datasheet (208.00 KB)

IXTY02N50D Datasheet Preview — Preview of IXTY02N50D PDF

Datasheet Details

Part number:

IXTY02N50D

Manufacturer:

IXYS Corporation

File Size:

208.00 KB

Description:

Power mosfet.

📁 Related Datasheet

IXTY02N120P Power MOSFET (IXYS)

IXTY01N100 Power MOSFET (IXYS Corporation)

IXTY01N100D N-Channel MOSFET (IXYS Corporation)

IXTY01N80 Power MOSFET (IXYS Corporation)

IXTY05N100 Power MOSFET (IXYS)

IXTY05N100 N-Channel MOSFET (INCHANGE)

IXTY08N100D2 Power MOSFET (IXYS)

IXTY08N100P Power MOSFET (IXYS)

TAGS

IXTY02N50D Power MOSFET IXYS Corporation

IXTY02N50D Distributor