IXTY01N100 Power MOSFET

IXYS Corporation

Description

High Voltage Power MOSFET IXTU01N100 IXTY01N100 VDSS = ID25 =  RDS(on) 1000V 100mA 80 N-Channel Enhancement Mode TO-251 (IXTU) Symbol VDSS VDG.

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Datasheet Specifications

Part number: IXTY01N100
Manufacturer: IXYS Corporation
File Size: 152.03 KB
Datasheet: IXTY01N100_IXYSCorporation.pdf
Description: Power MOSFET

Features

* International Standard Packages
* Fast Switching Times
* Avalanche Rated
* Rds(on) HDMOSTM Process
* Rugged Polysilicon Gate Cell structure Advantages
* High Power Density

Applications

* Level Shifting
* Triggers
* Solid State Relays
* Current Regulators © 2017 IXYS CORPORATION, All Rights Reserved DS98812E(9/17) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 50mA, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(

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IXTY01N100 Power MOSFET IXYS Corporation

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