IXTY12N06T
IXYS
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Power mosfet.
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IXTY12N06T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 85mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot varia.
IXTY14N60X2 - Power MOSFET
(IXYS)
X2-Class Power MOSFET
N-Channel Enhancement Mode
IXTY14N60X2
D G
S
Symbol V
DSS
VDGR VGSS V
GSM
ID25 I
DM
IA EAS dv/dt
PD T
J
TJM Tstg TSOLD
Weight
.
IXTY18P10T - Power MOSFETs
(IXYS)
TrenchPTM Power MOSFETs
P-Channel Enhancement Mode Avalanche Rated
IXTY18P10T IXTA18P10T IXTP18P10T
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
TJ.
IXTY1N100P - Power MOSFET
(IXYS)
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTY1N100P IXTA1N100P IXTP1N100P
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD.
IXTY1N80 - High Voltage MOSFET
(IXYS)
..
High Voltage MOSFET
N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data
IXTA 1N80 IXTP 1N80 IXTY 1N80
VDSS ID25
.
IXTY1N80P - Power MOSFET
(IXYS)
Preliminary Technical Information
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P
VDSS = ID.
IXTY1R4N100P - Power MOSFET
(IXYS)
PolarTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated
IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P
VDSS ID25
RDS(on)
= 1000V = 1.4A ≤ 11.8Ω
.
IXTY1R4N100P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTY1R4N100P
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 11.8Ω@VGS=10V ·Fully characterized avalanche vo.
IXTY1R4N120P - Power MOSFET
(IXYS)
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTY1R4N120PHV IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P
Symbol
VDSS VDGR VGSS VGSM ID2.
IXTY1R4N120PHV - Power MOSFET
(IXYS)
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTY1R4N120PHV IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P
Symbol
VDSS VDGR VGSS VGSM ID2.