Datasheet Specifications
- Part number
- IXTY1N80
- Manufacturer
- IXYS
- File Size
- 81.05 KB
- Datasheet
- IXTY1N80_IXYS.pdf
- Description
- High Voltage MOSFET
Description
www.DataSheet4U.com High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data IXTA 1N80 IXTP 1N80 IXTY 1N80 VDSS ID25 .
Features
* Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Symbol Test Conditions ! International standard packages ! High voltage, Low RDS (on) HDMOSTM process Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 4.5 ±100 TJ = 25°C TJ = 125°C 9.5Applications
* cell structure VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 25 µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V ! Switch-mode ! ! DC choppers ! High frequency Advantages and resonant-mode power supplies Flyback inverters matching VGS = 10 V, ID = 500 mA Pulse test, t ≤IXTY1N80 Distributors
📁 Related Datasheet
📌 All Tags