IXTY1R4N100P Power MOSFET

IXYS

Description

PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P VDSS ID25 RDS(on) = 1000V = 1.4A ≤ 11.8Ω .

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Datasheet Specifications

Part number: IXTY1R4N100P
Manufacturer: IXYS
File Size: 261.49 KB
Datasheet: IXTY1R4N100P-IXYS.pdf
Description: Power MOSFET

Features

* z z z z z S D (Tab) TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) G DS D (Tab) 1.6mm (0.062) from Case for 10s Plastic Body for 10s Mounting Force TO-252 TO-263 TO-220 (TO-263) Mounting Torque (TO-220) 300 260 10..65/2.2..14.6 1.13 / 10 0.35 2.50 3.00 G = Gate S = Source D = Drain Tab = Dr

Applications

* z 5 μA 150 μA 11.8 Ω z z z z VGS = 10V, ID = 0.5
* ID25, Note 1 Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls © 2011 IXYS CORPORATION, All Rights Reserved DS99737B(08/11) http://www. Datasheet4U. com IXTY1R

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IXTY1R4N100P Power MOSFET IXYS

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