IXTY01N100D
IXYS Corporation
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N-channel mosfet.
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IXTY01N100 - Power MOSFET
(IXYS Corporation)
High Voltage Power MOSFET
IXTU01N100 IXTY01N100
VDSS =
ID25 = RDS(on)
1000V 100mA 80
N-Channel Enhancement Mode
TO-251 (IXTU)
Symbol
VDSS VDG.
IXTY01N80 - Power MOSFET
(IXYS Corporation)
..
High Voltage MOSFET
N-Channel, Enhancement Mode
IXTU 01N80 IXTY 01N80
VDSS ID25
RDS(on)
= 800 V = 100mA = 50 Ω
Preliminary da.
IXTY02N120P - Power MOSFET
(IXYS)
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTY02N120P IXTP02N120P
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD TJ TJM T.
IXTY02N50D - Power MOSFET
(IXYS Corporation)
High Voltage Power MOSFET
N-Channel
IXTY02N50D IXTU02N50D IXTP02N50D
D
VDSX =
ID25
=
RDS(on)
500V 200mA
30
TO-252 (IXTY)
G S
Symbol
VDSX V.
IXTY05N100 - Power MOSFET
(IXYS)
High Voltage Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTU05N100 IXTY05N100
VDSS =
ID25 = RDS(on)
1000V 750mA 17
TO-251 (IXTU)
.
IXTY05N100 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTY05N100
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 17Ω@VGS=10V ·Fully characterized avalanche voltag.
IXTY08N100D2 - Power MOSFET
(IXYS)
Depletion Mode MOSFET
N-Channel
IXTY08N100D2 IXTA08N100D2 IXTP08N100D2
D
VDSX = ID(on) >
RDS(on)
1000V 800mA
21
TO-252 (IXTY)
G S
G S D (Tab).
IXTY08N100P - Power MOSFET
(IXYS)
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTY08N100P IXTA08N100P IXTP08N100P
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt.
IXTY08N100P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTY08N100P
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 20Ω@VGS=10V ·Fully characterized avalanche volta.
IXTY08N50D2 - N-Channel MOSFET
(IXYS Corporation)
Depletion Mode MOSFET
N-Channel
IXTY08N50D2 IXTA08N50D2 IXTP08N50D2
D
VDSX = ID(on) >
RDS(on)
500V 800mA
4.6
TO-252 (IXTY)
G S
Symbol
VDSX VG.