IXTY1R4N120PHV
IXYS
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Power mosfet.
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IXTY1R4N120P - Power MOSFET
(IXYS)
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTY1R4N120PHV IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P
Symbol
VDSS VDGR VGSS VGSM ID2.
IXTY1R4N100P - Power MOSFET
(IXYS)
PolarTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated
IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P
VDSS ID25
RDS(on)
= 1000V = 1.4A ≤ 11.8Ω
.
IXTY1R4N100P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTY1R4N100P
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 11.8Ω@VGS=10V ·Fully characterized avalanche vo.
IXTY1R4N60P - Power MOSFET
(IXYS)
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTU1R4N60P IXTY1R4N60P IXTP1R4N60P
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt.
IXTY1R4N60P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTY1R4N60P
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 9.0Ω@VGS=10V ·Fully characterized avalanche volt.
IXTY1R6N100D2 - N-Channel MOSFET
(IXYS Corporation)
Depletion Mode MOSFET
N-Channel
IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2
D
VDSX = ID(on) >
RDS(on)
1000V 1.6A
10
TO-252 (IXTY)
G S
Symbol
VD.
IXTY1R6N50D2 - N-Channel MOSFET
(IXYS Corporation)
Depletion Mode MOSFET
N-Channel
IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2
D
G S
Symbol
VDSX VGSX VGSM
PD
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditio.
IXTY1R6N50P - Power MOSFET
(IXYS)
PolarTM Power MOSFET
IXTY1R6N50P IXTP1R6N50P
VDSS = 500V
ID25 = 1.6A RDS(on) 6.5
N-Channel Enhancement Mode
Avalanche Rated
TO-252
Fast Intri.
IXTY1R6N50P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 6.5Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations fo.
IXTY12N06T - Power MOSFET
(IXYS)
Preliminary Technical Information
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTU12N06T IXTY12N06T
VDSS = ID25 =
RDS(on) ≤
.