IXTY1R6N50P - N-Channel MOSFET
IXTY1R6N50P Features
* Static drain-source on-resistance: RDS(on) ≤ 6.5Ω
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* APPLICATION
* DC/DC Converter
* Ideal for high-frequency switching and synchronous rectification
* ABSOLUTE MAXIMU
