IXTY26P10T - P-Channel MOSFET

INCHANGE

IXTY26P10T Datasheet Preview — Preview of IXTY26P10T PDF

Datasheet Details

Part number	IXTY26P10T
Manufacturer	INCHANGE
File Size	257.34 KB
Description	P-Channel MOSFET
Datasheet	IXTY26P10T-INCHANGE.pdf

IXTY26P10T Product details

Description

High side switching Push pull amplifiers Current regulators ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±15 V ID Drain Current-Continuous -26 A IDM Drain Current-Single Pulsed -80 A PD Total Dissipation @TC=25℃ 150 W Tj Max.Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case t

Features

Static drain-source on-resistance: RDS(on)≤90mΩ.
Enhancement mode:.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Nov 25, 2020 |