IXTY2N60P Datasheet - IXYS Corporation

IXTY2N60P Power MOSFET

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY2N60P IXTP2N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-220 Maximum Ratings 6.

IXTY2N60P Features

* International Standard Packages

* Low Q G

* Avalanche Rated

* Low Package Inductance

* Fast Intrinsic Rectifier Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* DC-DC Converters

* Switch-Mode and Resonant-Mode Power Supplie

IXTY2N60P Datasheet (249.54 KB)

IXTY2N60P Datasheet Preview — Preview of IXTY2N60P PDF

Datasheet Details

Part number:

IXTY2N60P

Manufacturer:

IXYS Corporation

File Size:

249.54 KB

Description:

Power mosfet.

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IXTY2N60P Power MOSFET IXYS Corporation

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