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IXTY1R4N60P - N-Channel MOSFET

INCHANGE

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Datasheet Details

Part number	IXTY1R4N60P
Manufacturer	INCHANGE
File Size	262.02 KB
Description	N-Channel MOSFET
Datasheet	IXTY1R4N60P-INCHANGE.pdf

IXTY1R4N60P Product details

Features

Static drain-source on-resistance: RDS(on) ≤ 9.0Ω@VGS=10V.
Fully characterized avalanche voltage and current.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Nov 23, 2020 |