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IXTY1R4N60P

N-Channel MOSFET

IXTY1R4N60P Features

* Static drain-source on-resistance: RDS(on) ≤ 9.0Ω@VGS=10V

* Fully characterized avalanche voltage and current

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* APPLICATION

* DC/DC Converter

* Ideal for high-frequenc

IXTY1R4N60P Datasheet (262.02 KB)

Preview of IXTY1R4N60P PDF

Datasheet Details

Part number:

IXTY1R4N60P

Manufacturer:

INCHANGE

File Size:

262.02 KB

Description:

N-channel mosfet.

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IXTY1R4N60P N-Channel MOSFET INCHANGE

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