Datasheet Details
- Part number
- IXTY1R4N60P
- Manufacturer
- INCHANGE
- File Size
- 262.02 KB
- Datasheet
- IXTY1R4N60P-INCHANGE.pdf
- Description
- N-Channel MOSFET
IXTY1R4N60P Description
isc N-Channel MOSFET Transistor IXTY1R4N60P *.IXTY1R4N60P Features
* Static drain-source on-resistance: RDS(on) ≤ 9.0Ω@VGS=10VIXTY1R4N60P Applications
* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field
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