IXTY1R4N60P Datasheet, Mosfet, INCHANGE

IXTY1R4N60P Features

• Mosfet
• Static drain-source on-resistance: RDS(on) ≤ 9.0Ω@VGS=10V
• Fully characterized avalanche voltage and current
• 100% avalanche tested
• Minimum Lot-to-Lot

PDF File Details

Part number:

IXTY1R4N60P

Manufacturer:

INCHANGE

File Size:

262.02kb

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📄 Datasheet

Description:

N-channel mosfet.

IXTY1R4N60P Application

• Applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipmen

TAGS

IXTY1R4N60P

INCHANGE

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