KTD600K - NPN Transistor
*High Collector Current-IC= 1.0A *High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) *Good Linearity of hFE *Low Saturation Voltage *Complement to Type 2SB631K *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable op
