KTD600K NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor KTD600K .
High Collector Current-IC= 1. High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Good Linearity of hFE. Low Saturati.

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Datasheet Specifications

Part number: KTD600K
Manufacturer: INCHANGE
File Size: 213.70 KB
Datasheet: KTD600K-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICP Collector Current-Pulse Col

KTD600K Distributors

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KTD600K NPN Transistor INCHANGE

INCHANGE KTD600K-like datasheet

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