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KTD600K - NPN Transistor

KTD600K Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor KTD600K .
High Collector Current-IC= 1. High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Good Linearity of hFE. Low Saturati.

KTD600K Applications

* Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICP Collector Current-Pulse Col

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Datasheet Details

Part number
KTD600K
Manufacturer
INCHANGE
File Size
213.70 KB
Datasheet
KTD600K-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE KTD600K-like datasheet

KTD600K Stock/Price