Datasheet4U Logo Datasheet4U.com

MJ11015 Datasheet, Transistor, INCHANGE

✔ MJ11015 Application

PDF File Details

part Manufacture Logo for INCHANGE
INCHANGE manufacturer logo and representative part image

Part number:

MJ11015

Manufacturer:

INCHANGE

File Size:

203.88kb

Download:

📄 Datasheet

Description:

Pnp transistor. *Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) *High DC Current Gain- : hFE= 1000(Min.)@IC= -20A *Low Collector Satura

Datasheet Preview: MJ11015 📥 Download PDF (203.88kb)
Page 2 of MJ11015

TAGS

MJ11015
PNP
Transistor
INCHANGE

📁 Related Datasheet

MJ11011 - PNP Transistor (INCHANGE)
isc Silicon PNP Darlington Power Transistor MJ11011 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -60V(Min.) ·High DC Current Gain- :.

MJ11012 - 30 AMPERE DARLINGTON POWER TRANSISTORS (Motorola Inc)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11012/D High-Current Complementary Silicon Transistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ.

MJ11012 - High-Current Complementary Silicon NPN Transistors (ON Semiconductor)
MJ11015 (PNP); MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in .

MJ11012 - NPN Transistor (DIGITRON)
MJ11012, MJ11014, MJ11016 High-reliability discrete products and engineering services since 1977 NPN SILICON POWER DARLINGTON TRANSISTORS FEATURES .

MJ11012 - NPN Transistor (INCHANGE)
isc Silicon NPN Darlington Power Transistor MJ11012 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 60V(Min.) ·High DC Current Gain- : .

MJ11013 - DARLINGTON POWER TRANSISTORS (ON Semiconductor)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11012/D High-Current Complementary Silicon Transistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ.

MJ11013 - 30 AMPERE DARLINGTON POWER TRANSISTORS (Motorola Inc)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11012/D High-Current Complementary Silicon Transistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ.

MJ11013 - POWER TRANSISTOR (Inchange Semiconductor)
isc Silicon PNP Darlington Power Transistor MJ11013 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -90V(Min.) ·High DC Current Gain- .

MJ11014 - 30 AMPERE DARLINGTON POWER TRANSISTORS (Motorola Inc)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11012/D High-Current Complementary Silicon Transistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ.

MJ11014 - DARLINGTON POWER TRANSISTORS (ON Semiconductor)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11012/D High-Current Complementary Silicon Transistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ.

Stock and price

part
onsemi
TRANS PNP DARL 120V 30A TO204
DigiKey
MJ11015G
577 In Stock
Qty : 500 units
Unit Price : $4.33
Since 2006. D4U Semicon. Datasheet4U.com Contact Us Privacy Policy Purchase of parts