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MJ11032 NPN Transistor

MJ11032 Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min. High DC Current Gain- : hFE= 1000(Min. Com.

MJ11032 Applications

* Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-

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Datasheet Details

Part number
MJ11032
Manufacturer
INCHANGE
File Size
203.27 KB
Datasheet
MJ11032-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
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