R6006JNX - N-Channel MOSFET

INCHANGE

R6006JNX Datasheet Preview — Preview of R6006JNX PDF

Datasheet Details

Part number	R6006JNX
Manufacturer	INCHANGE
File Size	247.74 KB
Description	N-Channel MOSFET
Datasheet	R6006JNX-INCHANGE.pdf

R6006JNX Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 6 A IDM Drain Current-Single Pluse 18 A PD Total Dissipation @TC=25℃ 43 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resi

Features

Drain Current.
ID=6A@ TC=25℃.
Drain Source Voltage- : VDSS=600V(Min).
Static Drain-Source On-Resistance : RDS(on) = 936mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 R6006JNX Similar Datasheet

R6006JND3 - Power MOSFET (ROHM)
R6006JNJ - Power MOSFET (ROHM)
R6006AND - Nch 600V 6A Power MOSFET (Rohm)
R6006ANX - Nch 600V 6A Power MOSFET (Rohm)
R6006KND3 - Power MOSFET (ROHM)
R6006KNX - Power MOSFET (ROHM)
R6006PND3FRA - Power MOSFET (ROHM)
R600 - General Purpose Rectifier (Powerex Power Semiconductors)

Other Datasheets by INCHANGE

R6002END3 - N-Channel MOSFET
R6003KND3 - N-Channel MOSFET
R6004ENJ - N-Channel MOSFET
R6004ENX - N-Channel MOSFET
R6004JND3 - N-Channel MOSFET
R6004JNJ - N-Channel MOSFET

Published: Jan 20, 2021 |