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R6507ENJ - N-Channel MOSFET

R6507ENJ Description

isc N-Channel MOSFET Transistor R6507ENJ .
Designed for use in switch mode power supplies and general purpose applications.

R6507ENJ Features

* Drain Current
* ID= 7A@ TC=25℃
* Drain Source Voltage- : VDSS=650V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 665mΩ(Max)
* 100% avalanche tested

R6507ENJ Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pluse 21 A PD Total Dissipation @TC=25℃ 78 W TJ Max. Operating Junction Temperatur

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Datasheet Details

Part number
R6507ENJ
Manufacturer
INCHANGE
File Size
250.12 KB
Datasheet
R6507ENJ-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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