Datasheet Details
- Part number
- R6507ENJ
- Manufacturer
- INCHANGE
- File Size
- 250.12 KB
- Datasheet
- R6507ENJ-INCHANGE.pdf
- Description
- N-Channel MOSFET
R6507ENJ Description
isc N-Channel MOSFET Transistor R6507ENJ .
Designed for use in switch mode power supplies and general
purpose applications.
R6507ENJ Features
* Drain Current
* ID= 7A@ TC=25℃
* Drain Source Voltage-
: VDSS=650V(Min)
* Static Drain-Source On-Resistance
: RDS(on) = 665mΩ(Max)
* 100% avalanche tested
R6507ENJ Applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
7
A
IDM
Drain Current-Single Pluse
21
A
PD
Total Dissipation @TC=25℃
78
W
TJ
Max. Operating Junction Temperatur
📁 Related Datasheet
📌 All Tags