R6507ENJ N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor R6507ENJ .
Designed for use in switch mode power supplies and general purpose applications.

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Datasheet Specifications

Part number: R6507ENJ
Manufacturer: INCHANGE
File Size: 250.12 KB
Datasheet: R6507ENJ-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Drain Current
* ID= 7A@ TC=25℃
* Drain Source Voltage- : VDSS=650V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 665mΩ(Max)
* 100% avalanche tested

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pluse 21 A PD Total Dissipation @TC=25℃ 78 W TJ Max. Operating Junction Temperatur

R6507ENJ Distributors

📁 Related Datasheet

R6507ENX R6507 R6500 R6500-1 R6500-11 R6500-12

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R6507ENJ N-Channel MOSFET INCHANGE

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