R8002ANX N-Channel MOSFET

INCHANGE

R8002ANX Description

isc N-Channel MOSFET Transistor R8002ANX .
Designed for use in switch mode power supplies and general purpose applications.

R8002ANX Features

* Drain Current
* ID= 2A@ TC=25℃
* Drain Source Voltage- : VDSS=800V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 4.3Ω(Max)
* 100% avalanche tested

R8002ANX Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 2 A IDM Drain Current-Single Pluse 8 A PD Total Dissipation @TC=25℃ 36 W TJ Max. Operating Junction Temperature

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Datasheet Details

Part number: R8002ANX
Manufacturer: INCHANGE
File Size: 247.22 KB
Datasheet: R8002ANX-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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