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RD3P050SN N-Channel MOSFET

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Description

Isc N-Channel MOSFET Transistor RD3P050SN *.

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Datasheet Specifications

Part number
RD3P050SN
Manufacturer
INCHANGE
File Size
195.52 KB
Datasheet
RD3P050SN-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* With To-252(DPAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 5 IDM Drain Current-Single Pulsed 20 PD Total Dissipation @TC=25℃ 15 Tch Max. Operating Junction Temper

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