RD3S100CN
INCHANGE
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N-channel mosfet.
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RD3S100CN - Power MOSFET
(ROHM)
RD3S100CN
Nch 190V 10A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
190V 182mΩ ±10A
85W
lFeatures
1) Low on-resistance 2) Fast switching speed 3) Drive .
RD3S075CN - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
RD3S075CN
FEATURES ·Drain Current –ID= 7.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 190V(Min) ·Static Drain-Source On.
RD3S075CN - Power MOSFET
(ROHM)
.
RD3ST24 - Standby Controller
(Renesas)
RD3ST24
Standby Control IC
REJ03D0521-0200 Rev.2.00
Mar 01, 2006
Description
RD3ST24 is including the standby control circuit for a microputer in .
RD3.0E - Zener diode
(Excel Semiconductor)
RD2.0E~RD39E
Zener diode
Features
1. DO-35 Glass sealed package 2. Planar process 3. Vz applied E24 standard
Applications
Circuits for constant volta.
RD3.0E - SILICON ZENER DIODES
(EIC)
RD2.0E ~ RD39E
VZ : 2.0 - 39 Volts PD : 500 mW
FEATURES :
* Complete 2.0 to 39 Volts * High peak reverse power dissipation * High reliability * Low le.
RD3.0E - Zener Diode
(NEC)
DATA SHEET
ZENER DIODES
RD2.0E to RD200E
500 mW DHD ZENER DIODE (DO-35)
DESCRIPTION
NEC Type RD2.0E to RD200E Series are planar type zener diode in.
RD3.0E - 500mW PLANAR TYPE SILICON ZENER DIODES
(Renesas)
DATA SHEET
ZENER DIODES
RD2.0E to RD120E
500 mW PLANAR TYPE SILICON ZENER DIODES
DESCRIPTION
These products are zener diodes with an allowable dissip.
RD3.0EB - ZENER DIODES
(SEMTECH)
RD2.0E~RD200E
ZENER DIODES
Features • DHD (Double Heatsink Diode) Construction • Vz: Applied E24 standard (RD130E to RD200E: 10 volts step). • DO-35 G.
RD3.0ES - Zener diode
(WEJ)
RD2.0ES~RD39ES
Zener diode
Features
1. DO-34 Glass sealed package This diode can be inserted into a PC board with a shorter pitch(5mm)
2. Planar proc.