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RD3S100CN

N-Channel MOSFET

RD3S100CN Features

* Drain Current

* ID= 10A@ TC=25℃

* Drain Source Voltage- : VDSS= 190V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 182mΩ(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* Designed for use

RD3S100CN General Description


*Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 190 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Plus.

RD3S100CN Datasheet (260.80 KB)

Preview of RD3S100CN PDF

Datasheet Details

Part number:

RD3S100CN

Manufacturer:

INCHANGE

File Size:

260.80 KB

Description:

N-channel mosfet.

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RD3S100CN N-Channel MOSFET INCHANGE

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