RD3T050CN - N-Channel MOSFET

INCHANGE

📥 Download Datasheet

RD3T050CN Datasheet Preview — Preview of RD3T050CN PDF

Datasheet Details

Part number	RD3T050CN
Manufacturer	INCHANGE
File Size	260.77 KB
Description	N-Channel MOSFET
Datasheet	RD3T050CN-INCHANGE.pdf

RD3T050CN Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 5 A IDM Drain Current-Single Pluse 20 A PD Total Dissipation @TC=25℃ 29 W TJ Max.Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resist

Features

Drain Current.
ID= 5A@ TC=25℃.
Drain Source Voltage- : VDSS= 200V(Min).
Static Drain-Source On-Resistance : RDS(on) = 760mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 RD3T050CN Similar Datasheet

RD3T075CN - Power MOSFET (ROHM)
RD3T100CN - Power MOSFET (ROHM)
RD3.0E - Zener diode (Excel Semiconductor)
RD3.0EB - ZENER DIODES (SEMTECH)
RD3.0ES - Zener diode (WEJ)
RD3.0F - ZENER DIODES (EIC)
RD3.0FM - SURFACE MOUNT SILICON ZENER DIODES (SunMate)
RD3.0M - ZENER DIODES (NEC)

Other Datasheets by INCHANGE

RD3G400GN - N-Channel MOSFET
RD3G500GN - N-Channel MOSFET
RD3G600GN - N-Channel MOSFET
RD3H045SP - P-Channel MOSFET
RD3H080SP - P-Channel MOSFET
RD3H160SP - P-Channel MOSFET

Published: Mar 15, 2021 |