RD3T050CN Datasheet, Mosfet, INCHANGE

RD3T050CN Features

• Mosfet
• Drain Current
    –ID= 5A@ TC=25℃
• Drain Source Voltage- : VDSS= 200V(Min)
• Static Drain-Source On-Resistance : RDS(on) = 760mΩ(Max)
• 100% a

PDF File Details

Part number:

RD3T050CN

Manufacturer:

INCHANGE

File Size:

260.77kb

Download:

📄 Datasheet

Description:

N-channel mosfet. Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

RD3T050CN Application

• Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continu

TAGS

RD3T050CN

INCHANGE

📁 Related Datasheet

RD3T050CN - Power MOSFET (ROHM)
RD3T050CN 　　Nch 200V 5A Power MOSFET 　　 Datasheet lOutline VDSS 200V 　 RDS(on)(Max.) 760mΩ DPAK ID ±5A TO-252 PD 29W lFeatures 1) Low on.

RD3T075CN - Power MOSFET (ROHM)
RD3T075CN Nch 200V 7.5A Power MOSFET Datasheet VDSS RDS(on)(Max.) ID PD 200V 325mΩ ±7.5A 52W lFeatures 1) Low on-resistance 2) Fast switching spee.

RD3T075CN - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor RD3T075CN FEATURES ·Drain Current –ID= 7.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On.

RD3T100CN - Power MOSFET (ROHM)
.

RD3T100CN - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor RD3T100CN FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-.

RD3.0E - Zener diode (Excel Semiconductor)
RD2.0E~RD39E Zener diode Features 1. DO-35 Glass sealed package 2. Planar process 3. Vz applied E24 standard Applications Circuits for constant volta.

RD3.0E - SILICON ZENER DIODES (EIC)
RD2.0E ~ RD39E VZ : 2.0 - 39 Volts PD : 500 mW FEATURES : * Complete 2.0 to 39 Volts * High peak reverse power dissipation * High reliability * Low le.

RD3.0E - Zener Diode (NEC)
DATA SHEET ZENER DIODES RD2.0E to RD200E 500 mW DHD ZENER DIODE (DO-35) DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in.

RD3.0E - 500mW PLANAR TYPE SILICON ZENER DIODES (Renesas)
DATA SHEET ZENER DIODES RD2.0E to RD120E 500 mW PLANAR TYPE SILICON ZENER DIODES DESCRIPTION These products are zener diodes with an allowable dissip.

RD3.0EB - ZENER DIODES (SEMTECH)
RD2.0E~RD200E ZENER DIODES Features • DHD (Double Heatsink Diode) Construction • Vz: Applied E24 standard (RD130E to RD200E: 10 volts step). • DO-35 G.