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RU2H50R N-Channel MOSFET

RU2H50R Description

isc N-Channel MOSFET Transistor *.

RU2H50R Features

* Static drain-source on-resistance: RDS(on) ≤43mΩ
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

RU2H50R Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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Datasheet Details

Part number
RU2H50R
Manufacturer
INCHANGE
File Size
246.41 KB
Datasheet
RU2H50R-INCHANGE.pdf
Description
N-Channel MOSFET

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