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RU2H50S N-Channel Advanced Power MOSFET

RU2H50S Description

RU2H50S N-Channel Advanced Power MOSFET MOSFET .
TO-263 Applications. Switching Application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Ot.

RU2H50S Features

* 200V/60A, RDS (ON) =36mΩ (Type) @ VGS=10V
* Low Gate Charge
* Fast Switching
* 100% avalanche tested
* 175°C Operating Temperature

RU2H50S Applications

* Switching Application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Curren

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Datasheet Details

Part number
RU2H50S
Manufacturer
Ruichips
File Size
275.13 KB
Datasheet
RU2H50S-Ruichips.pdf
Description
N-Channel Advanced Power MOSFET

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