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RU2H50S

N-Channel Advanced Power MOSFET

RU2H50S Features

* 200V/60A, RDS (ON) =36mΩ (Type) @ VGS=10V

* Low Gate Charge

* Fast Switching

* 100% avalanche tested

* 175°C Operating Temperature

* Lead Free,RoHS compliant Pin Description TO-263 Applications

* Switching Application N-Channel MOSFET Abs

RU2H50S General Description

TO-263 Applications

* Switching Application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Cont.

RU2H50S Datasheet (275.13 KB)

Preview of RU2H50S PDF

Datasheet Details

Part number:

RU2H50S

Manufacturer:

Ruichips

File Size:

275.13 KB

Description:

N-channel advanced power mosfet.

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RU2H50S N-Channel Advanced Power MOSFET Ruichips

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